Mercury Probe CVmap Applications


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Mercury Probe CVmap Applications:



Capacitance-Voltage (CV):



  • Cd (square wave deep pulse)

  • Cq (square wave quasi static)

  • Ch (square wave high frequency)

  • Sinusoidal Ch (Agilent 4192A, 4285 A, Keithley 590)


Current Voltage (IV):



  • Current range 10fA to 1mA, Voltage range up to +/-100V

  • extended Voltage range +/- 1000V (Keithley 2410, 237)

  • Constant current

  • Constant voltage

  • Multi terminal IV curves (pseudo MOST technique)


Silicon: Oxide and gate material (low k, high k) characterization and integrity monitoring



  • Cox (Oxide capacitance)

  • tox (Oxide thickness)

  • K value (dielectric constant)

  • K-f (frequency dependent dielectric constant)

  • teq (equivalent oxide thickness)

  • Vfb (flat band voltage)

  • Dit (Interface trap density)

  • (Sheet) Resistance and Resistivity measurement of SiO2 and semi-insulating materials

  • TDDB (Time dependent dielectric breakdown) tests:

    • tbd (time to breakdown)

    • Qbd (Charge to Breakdown)

    • Vbd (ramp breakdown Voltage)

    • Defect density (Density of defect causing early breakdown, e.g. Pinhole density)

    • Cumulative failure analysis

    • Furnace Contamination monitoring



  • Mobile ion concentration with hot chuck

  • Current-Voltage (IV):

    • leakage current mapping

    • ultra thin oxide thickness mapping



  • Stress testing (CV, V stress, CV)


Doping and low dose ion implantation monitoring:



  • N(W) (doping density profiling of raw wafer and epitaxial layers)

  • PØ (partial dose)

  • I (Ion implantation density)


Determining carrier generation lifetime



  • C-I (Capacitance vs. Current)

  • tg (Carrier generation lifetime)


SOI characterization (B systems)



  • Pseudo MOST technique

    • Id-Vg (Drain current vs. Gate Voltage ) at varying Vd (Drain Voltage)

    • gm-V (transconductance vs. Voltage)

    • Electron and hole mobility

    • Ø Mobility degradation factor



  • Buried oxide characterization

    • Leakage mapping

    • C-Vg (Capacitance-gate Voltage) for Dit (Interface trap density)




Compound Semiconductors



  • N(W) Carrier density profiling

  • Resistivity of semi-insulating substrates or layers

  • Pinch-off Voltage


High Resistivity Materials (Undoped Poly-Silicon, Carbon film)



  • I-V (Current vs. Voltage)

  • (Sheet) Resistance and Resistivity measurement


Ferroelectric materials



  • K-E (dielectric vs. electric field)

  • P-E (polarization vs. electric field)

  • K-f (dielectric vs. frequency) with Model 192 probe station

  • K-T (dielectric vs. temperature) with temperature chamber for Tc (Curie temperature)

  • Hysteresis loop


 

CVmap 3093AC/BC


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CVmap 3093 AC/BC Features:


  • Cassette to cassette version of CVmap 3093 A/B

  • 150mm, 200 mm, and 300 mm (6", 8", and 12") capability

  • Safety first design principle

  • Unique Mercury probe:

    • Dot area 5E-5 to 0.6 cm2

    • Contact area repeatability better 2%

    • Contact configurations: Dot, Dot / Ring, Dot / 2 Rings

    • Refreshed mercury before each contact insures clean contact

    • Probe head easy to change

    • Integrated light source for illumination of measured sample (probe head dependent)

    • Minimal probe head to wafer contact area

    • Non scratching poly-carbonate probe head material

    •  



  • Capacitance test:

    • Quasistatic method with square wave signals (internal)

    • High frequency method with square wave signals (internal)

    • Deep pulsed method with square wave signals (internal)

    • Test frequency up to 10kHz (Bandwidth 1 MHz)

    • External C-V meters (Bandwidth:1MHz standard, up to 10MHz optional)

    • Capacitance measurement range: 0 to 20 nF

    • Stray capacitance < 1.5pF (desktop systems)

    • Equivalent oxide thickness by C-V: 1 nm to 2000 nm, repeatability <±1%

    • Bias voltage +/- 100 V

    •  



  • Current / Voltage test:

    • Bias voltage +/- 100 V (with external source up to +/- 1000V, optional)

    • Current range: 10fA to 1mA with freely selectable threshold

    • Oxide thickness by I-V method 1.5 nm to 3nm

    •  



  • Edge exclusion down to 2mm (probe head dependent)

  • Versatility:

    • Connections for external 2 and 4 terminal meters

    • Connections for attaching external probe stage

    •  



  • Internal automatic calibration

  • Norms and standards:

    • SEMI S2-0200 standard compliant (92A/B)

    • CE mark (European models only)

    • EN55024:1998

    • FCC Part 15 Class A




CV Map 92


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Mercury Probe Systems CVMAP 92 A/B


  • Desktop system

  • Unique Mercury probe:

    • Dot area 5E-5 to 0.6 cm2

    • Contact area repeatability better 2%

    • Contact configurations: Dot, Dot / Ring, Dot / 2 Rings

    • Refreshed mercury before each contact insures clean contact

    • Probe head easy to change

    • Integrated light source for illumination of measured sample (probe head dependent)

    • Minimal probe head to wafer contact area

    • Non scratching poly-carbonate probe head material

    •  



  • Capacitance test:

    • Quasistatic method with square wave signals (internal)

    • High frequency method with square wave signals (internal)

    • Deep pulsed method with square wave signals (internal)

    • Test frequency up to 10kHz (Bandwidth 1 MHz)

    • External C-V meters (Bandwidth:1MHz standard, up to 10MHz optional)

    • Capacitance measurement range: 0 to 20 nF

    • Stray capacitance < 1.5pF (desktop systems)

    • Equivalent oxide thickness by C-V: 1 nm to 2000 nm, repeatability <±1%

    • Bias voltage +/- 100 V

    •  



  • Current / Voltage test:

    • Bias voltage +/- 100 V (with external source up to +/- 1000V, optional)

    • Current range: 10fA to 1mA with freely selectable threshold

    • Oxide thickness by I-V method 1.5 nm to 3nm

    •  



  • Edge exclusion down to 2mm (probe head dependent)

  • Versatility:

    • Connections for external 2 and 4 terminal meters

    • Connections for attaching external probe stage

    •  



  • Internal automatic calibration

  • Norms and standards:

    • SEMI S2-0200 standard compliant (92A/B)

    • CE mark (European models only)

    • EN55024:1998

    • FCC Part 15 Class A



  • Up to 200 mm (8") capability

  • Drawer for receiving the wafer

  • CVmap software

  • Safety first design principle