商品介绍

Mercury Probe CVmap Applications

Mercury Probe CVmap Applications:


Capacitance-Voltage (CV):

  • Cd (square wave deep pulse)
  • Cq (square wave quasi static)
  • Ch (square wave high frequency)
  • Sinusoidal Ch (Agilent 4192A, 4285 A, Keithley 590)

Current Voltage (IV):

  • Current range 10fA to 1mA, Voltage range up to +/-100V
  • extended Voltage range +/- 1000V (Keithley 2410, 237)
  • Constant current
  • Constant voltage
  • Multi terminal IV curves (pseudo MOST technique)

Silicon: Oxide and gate material (low k, high k) characterization and integrity monitoring

  • Cox (Oxide capacitance)
  • tox (Oxide thickness)
  • K value (dielectric constant)
  • K-f (frequency dependent dielectric constant)
  • teq (equivalent oxide thickness)
  • Vfb (flat band voltage)
  • Dit (Interface trap density)
  • (Sheet) Resistance and Resistivity measurement of SiO2 and semi-insulating materials
  • TDDB (Time dependent dielectric breakdown) tests:
    • tbd (time to breakdown)
    • Qbd (Charge to Breakdown)
    • Vbd (ramp breakdown Voltage)
    • Defect density (Density of defect causing early breakdown, e.g. Pinhole density)
    • Cumulative failure analysis
    • Furnace Contamination monitoring
  • Mobile ion concentration with hot chuck
  • Current-Voltage (IV):
    • leakage current mapping
    • ultra thin oxide thickness mapping
  • Stress testing (CV, V stress, CV)

Doping and low dose ion implantation monitoring:

  • N(W) (doping density profiling of raw wafer and epitaxial layers)
  • PØ (partial dose)
  • I (Ion implantation density)

Determining carrier generation lifetime

  • C-I (Capacitance vs. Current)
  • tg (Carrier generation lifetime)

SOI characterization (B systems)

  • Pseudo MOST technique
    • Id-Vg (Drain current vs. Gate Voltage ) at varying Vd (Drain Voltage)
    • gm-V (transconductance vs. Voltage)
    • Electron and hole mobility
    • Ø Mobility degradation factor
  • Buried oxide characterization
    • Leakage mapping
    • C-Vg (Capacitance-gate Voltage) for Dit (Interface trap density)

Compound Semiconductors

  • N(W) Carrier density profiling
  • Resistivity of semi-insulating substrates or layers
  • Pinch-off Voltage

High Resistivity Materials (Undoped Poly-Silicon, Carbon film)

  • I-V (Current vs. Voltage)
  • (Sheet) Resistance and Resistivity measurement

Ferroelectric materials

  • K-E (dielectric vs. electric field)
  • P-E (polarization vs. electric field)
  • K-f (dielectric vs. frequency) with Model 192 probe station
  • K-T (dielectric vs. temperature) with temperature chamber for Tc (Curie temperature)
  • Hysteresis loop

 

CVmap 3093AC/BC

CVmap 3093 AC/BC Features:

  • Cassette to cassette version of CVmap 3093 A/B
  • 150mm, 200 mm, and 300 mm (6", 8", and 12") capability
  • Safety first design principle
  • Unique Mercury probe:
    • Dot area 5E-5 to 0.6 cm2
    • Contact area repeatability better 2%
    • Contact configurations: Dot, Dot / Ring, Dot / 2 Rings
    • Refreshed mercury before each contact insures clean contact
    • Probe head easy to change
    • Integrated light source for illumination of measured sample (probe head dependent)
    • Minimal probe head to wafer contact area
    • Non scratching poly-carbonate probe head material
    •  
  • Capacitance test:
    • Quasistatic method with square wave signals (internal)
    • High frequency method with square wave signals (internal)
    • Deep pulsed method with square wave signals (internal)
    • Test frequency up to 10kHz (Bandwidth 1 MHz)
    • External C-V meters (Bandwidth:1MHz standard, up to 10MHz optional)
    • Capacitance measurement range: 0 to 20 nF
    • Stray capacitance < 1.5pF (desktop systems)
    • Equivalent oxide thickness by C-V: 1 nm to 2000 nm, repeatability <±1%
    • Bias voltage +/- 100 V
    •  
  • Current / Voltage test:
    • Bias voltage +/- 100 V (with external source up to +/- 1000V, optional)
    • Current range: 10fA to 1mA with freely selectable threshold
    • Oxide thickness by I-V method 1.5 nm to 3nm
    •  
  • Edge exclusion down to 2mm (probe head dependent)
  • Versatility:
    • Connections for external 2 and 4 terminal meters
    • Connections for attaching external probe stage
    •  
  • Internal automatic calibration
  • Norms and standards:
    • SEMI S2-0200 standard compliant (92A/B)
    • CE mark (European models only)
    • EN55024:1998
    • FCC Part 15 Class A

CV Map 92

Mercury Probe Systems CVMAP 92 A/B

  • Desktop system
  • Unique Mercury probe:
    • Dot area 5E-5 to 0.6 cm2
    • Contact area repeatability better 2%
    • Contact configurations: Dot, Dot / Ring, Dot / 2 Rings
    • Refreshed mercury before each contact insures clean contact
    • Probe head easy to change
    • Integrated light source for illumination of measured sample (probe head dependent)
    • Minimal probe head to wafer contact area
    • Non scratching poly-carbonate probe head material
    •  
  • Capacitance test:
    • Quasistatic method with square wave signals (internal)
    • High frequency method with square wave signals (internal)
    • Deep pulsed method with square wave signals (internal)
    • Test frequency up to 10kHz (Bandwidth 1 MHz)
    • External C-V meters (Bandwidth:1MHz standard, up to 10MHz optional)
    • Capacitance measurement range: 0 to 20 nF
    • Stray capacitance < 1.5pF (desktop systems)
    • Equivalent oxide thickness by C-V: 1 nm to 2000 nm, repeatability <±1%
    • Bias voltage +/- 100 V
    •  
  • Current / Voltage test:
    • Bias voltage +/- 100 V (with external source up to +/- 1000V, optional)
    • Current range: 10fA to 1mA with freely selectable threshold
    • Oxide thickness by I-V method 1.5 nm to 3nm
    •  
  • Edge exclusion down to 2mm (probe head dependent)
  • Versatility:
    • Connections for external 2 and 4 terminal meters
    • Connections for attaching external probe stage
    •  
  • Internal automatic calibration
  • Norms and standards:
    • SEMI S2-0200 standard compliant (92A/B)
    • CE mark (European models only)
    • EN55024:1998
    • FCC Part 15 Class A
  • Up to 200 mm (8") capability
  • Drawer for receiving the wafer
  • CVmap software
  • Safety first design principle