Mercury Probe CVmap Applications:

Capacitance-Voltage (CV):

• Cd (square wave deep pulse)
• Cq (square wave quasi static)
• Ch (square wave high frequency)
• Sinusoidal Ch (Agilent 4192A, 4285 A, Keithley 590)

Current Voltage (IV):

• Current range 10fA to 1mA, Voltage range up to +/-100V
• extended Voltage range +/- 1000V (Keithley 2410, 237)
• Constant current
• Constant voltage
• Multi terminal IV curves (pseudo MOST technique)

Silicon: Oxide and gate material (low k, high k) characterization and integrity monitoring

• Cox (Oxide capacitance)
• tox (Oxide thickness)
• K value (dielectric constant)
• K-f (frequency dependent dielectric constant)
• teq (equivalent oxide thickness)
• Vfb (flat band voltage)
• Dit (Interface trap density)
• (Sheet) Resistance and Resistivity measurement of SiO2 and semi-insulating materials
• TDDB (Time dependent dielectric breakdown) tests:
  • tbd (time to breakdown)
  • Qbd (Charge to Breakdown)
  • Vbd (ramp breakdown Voltage)
  • Defect density (Density of defect causing early breakdown, e.g. Pinhole density)
  • Cumulative failure analysis
  • Furnace Contamination monitoring
• Mobile ion concentration with hot chuck
• Current-Voltage (IV):
  • leakage current mapping
  • ultra thin oxide thickness mapping
• Stress testing (CV, V stress, CV)

Doping and low dose ion implantation monitoring:

• N(W) (doping density profiling of raw wafer and epitaxial layers)
• PØ (partial dose)
• I (Ion implantation density)

Determining carrier generation lifetime

• C-I (Capacitance vs. Current)
• tg (Carrier generation lifetime)

SOI characterization (B systems)

• Pseudo MOST technique
  • Id-Vg (Drain current vs. Gate Voltage ) at varying Vd (Drain Voltage)
  • gm-V (transconductance vs. Voltage)
  • Electron and hole mobility
  • Ø Mobility degradation factor
• Buried oxide characterization
  • Leakage mapping
  • C-Vg (Capacitance-gate Voltage) for Dit (Interface trap density)

Compound Semiconductors

• N(W) Carrier density profiling
• Resistivity of semi-insulating substrates or layers
• Pinch-off Voltage

High Resistivity Materials (Undoped Poly-Silicon, Carbon film)

• I-V (Current vs. Voltage)
• (Sheet) Resistance and Resistivity measurement

Ferroelectric materials

• K-E (dielectric vs. electric field)
• P-E (polarization vs. electric field)
• K-f (dielectric vs. frequency) with Model 192 probe station
• K-T (dielectric vs. temperature) with temperature chamber for Tc (Curie temperature)
• Hysteresis loop

CVmap 3093 AC/BC Features:

• Cassette to cassette version of CVmap 3093 A/B
• 150mm, 200 mm, and 300 mm (6", 8", and 12") capability
• Safety first design principle
• Unique Mercury probe:
  • Dot area 5E-5 to 0.6 cm2
  • Contact area repeatability better 2%
  • Contact configurations: Dot, Dot / Ring, Dot / 2 Rings
  • Refreshed mercury before each contact insures clean contact
  • Probe head easy to change
  • Integrated light source for illumination of measured sample (probe head dependent)
  • Minimal probe head to wafer contact area
  • Non scratching poly-carbonate probe head material
  •  
• Capacitance test:
  • Quasistatic method with square wave signals (internal)
  • High frequency method with square wave signals (internal)
  • Deep pulsed method with square wave signals (internal)
  • Test frequency up to 10kHz (Bandwidth 1 MHz)
  • External C-V meters (Bandwidth:1MHz standard, up to 10MHz optional)
  • Capacitance measurement range: 0 to 20 nF
  • Stray capacitance < 1.5pF (desktop systems)
  • Equivalent oxide thickness by C-V: 1 nm to 2000 nm, repeatability <±1%
  • Bias voltage +/- 100 V
  •  
• Current / Voltage test:
  • Bias voltage +/- 100 V (with external source up to +/- 1000V, optional)
  • Current range: 10fA to 1mA with freely selectable threshold
  • Oxide thickness by I-V method 1.5 nm to 3nm
  •  
• Edge exclusion down to 2mm (probe head dependent)
• Versatility:
  • Connections for external 2 and 4 terminal meters
  • Connections for attaching external probe stage
  •  
• Internal automatic calibration
• Norms and standards:
  • SEMI S2-0200 standard compliant (92A/B)
  • CE mark (European models only)
  • EN55024:1998
  • FCC Part 15 Class A

Mercury Probe Systems CVMAP 92 A/B

• Desktop system
• Unique Mercury probe:
  • Dot area 5E-5 to 0.6 cm2
  • Contact area repeatability better 2%
  • Contact configurations: Dot, Dot / Ring, Dot / 2 Rings
  • Refreshed mercury before each contact insures clean contact
  • Probe head easy to change
  • Integrated light source for illumination of measured sample (probe head dependent)
  • Minimal probe head to wafer contact area
  • Non scratching poly-carbonate probe head material
  •  
• Capacitance test:
  • Quasistatic method with square wave signals (internal)
  • High frequency method with square wave signals (internal)
  • Deep pulsed method with square wave signals (internal)
  • Test frequency up to 10kHz (Bandwidth 1 MHz)
  • External C-V meters (Bandwidth:1MHz standard, up to 10MHz optional)
  • Capacitance measurement range: 0 to 20 nF
  • Stray capacitance < 1.5pF (desktop systems)
  • Equivalent oxide thickness by C-V: 1 nm to 2000 nm, repeatability <±1%
  • Bias voltage +/- 100 V
  •  
• Current / Voltage test:
  • Bias voltage +/- 100 V (with external source up to +/- 1000V, optional)
  • Current range: 10fA to 1mA with freely selectable threshold
  • Oxide thickness by I-V method 1.5 nm to 3nm
  •  
• Edge exclusion down to 2mm (probe head dependent)
• Versatility:
  • Connections for external 2 and 4 terminal meters
  • Connections for attaching external probe stage
  •  
• Internal automatic calibration
• Norms and standards:
  • SEMI S2-0200 standard compliant (92A/B)
  • CE mark (European models only)
  • EN55024:1998
  • FCC Part 15 Class A
• Up to 200 mm (8") capability
• Drawer for receiving the wafer
• CVmap software
• Safety first design principle